Dominant mobility modulation by the electric field effect at the LaAlO3/SrTiO3 interface.

{
  "study_type": "other",
  "exposure": {
    "band": null,
    "source": "applied electric field (gate bias)",
    "frequency_mhz": null,
    "sar_wkg": null,
    "duration": null
  },
  "population": null,
  "sample_size": null,
  "outcomes": [
    "mobility variation",
    "sheet carrier density",
    "superconductivity suppression",
    "superconductor-insulator transition",
    "relative disorder strength"
  ],
  "main_findings": "Using magnetotransport studies of a gated LaAlO3/SrTiO3 interface structure, mobility variation was reported to be almost 5 times that of the sheet carrier density. Superconductivity was reported to be suppressible at both positive and negative gate bias, suggesting increased relative disorder strength across the superconductor-insulator transition.",
  "effect_direction": "mixed",
  "limitations": [
    "No sample size reported in the abstract.",
    "Electric field parameters (magnitude, waveform/frequency) are not specified in the abstract.",
    "Study context is a condensed-matter gated interface system rather than environmental/biomedical EMF exposure."
  ],
  "evidence_strength": "insufficient",
  "confidence": 0.74,
  "peer_reviewed_likely": "yes",
  "keywords": [
    "LaAlO3/SrTiO3 interface",
    "gate modulation",
    "electric field effect",
    "magnetotransport",
    "mobility",
    "sheet carrier density",
    "superconductivity",
    "superconductor-insulator transition",
    "disorder"
  ],
  "suggested_hubs": []
}