Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect.

Physical review letters · 2007 · Unclear · Insufficient evidence

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UnclearInsufficient evidencePaper 3442

A gate bias (electric field effect) was used to externally control the electronic gap of bilayer graphene. Using magnetotransport data and a tight-binding model, the gap was extracted as a function of electronic density and could be tuned from zero to mid-inf…

Study snapshot

PublicationPhysical review letters · 2007
Study typeother
Reported directionUnclear
Evidence ratingInsufficient

Abstract

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

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AI evidence extraction

Structured fields below were generated from the paper’s abstract and metadata to make the evidence easier to inspect. Automated extraction may be incomplete or incorrect; verify important details against the original paper.

Study typeother
Effect directionunclear
PopulationNot supplied
Sample sizeNot supplied
ExposureNot supplied
Evidence strengthInsufficientConfidence: 74% · Peer reviewed: yes

Main findings

A gate bias (electric field effect) was used to externally control the electronic gap of bilayer graphene. Using magnetotransport data and a tight-binding model, the gap was extracted as a function of electronic density and could be tuned from zero to mid-infrared energies using fields of approximately <1 V/nm.

Outcomes measured

  • Electronic band gap tuning in bilayer graphene
  • Magnetotransport (Shubnikov–de Haas) cyclotron mass measurements
  • Quantum Hall regime evidence of gap opening
View raw extracted JSON
{
  "study_type": "other",
  "exposure": {
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    "source": null,
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  },
  "population": null,
  "sample_size": null,
  "outcomes": [
    "Electronic band gap tuning in bilayer graphene",
    "Magnetotransport (Shubnikov–de Haas) cyclotron mass measurements",
    "Quantum Hall regime evidence of gap opening"
  ],
  "main_findings": "A gate bias (electric field effect) was used to externally control the electronic gap of bilayer graphene. Using magnetotransport data and a tight-binding model, the gap was extracted as a function of electronic density and could be tuned from zero to mid-infrared energies using fields of approximately <1 V/nm.",
  "effect_direction": "unclear",
  "limitations": [],
  "evidence_strength": "insufficient",
  "confidence": 0.74,
  "peer_reviewed_likely": "yes",
  "keywords": [
    "bilayer graphene",
    "gate bias",
    "electric field effect",
    "band gap",
    "magnetotransport",
    "Shubnikov-de Haas",
    "cyclotron mass",
    "tight-binding model",
    "quantum Hall"
  ],
  "suggested_hubs": []
}
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AI-extracted fields are generated from the abstract and metadata and may be incomplete or incorrect. This material is for informational purposes and is not medical advice.

Identifiers and source

DOI: 10.1103/physrevlett.99.216802
PubMed: 18233240

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