Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation.
← Research streamIn a high mobility GaAs/AlGaAs 2D electron system, radiation-induced magnetoresistance oscillations at low magnetic fields under circularly polarized microwave excitation were reported as similar to those under linearly polarized excitation. The magnetoresist…
Study snapshot
Abstract
A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularly- polarized microwave excitation indicates a profound difference in the response observed upon rotating the microwave launcher for the two cases, although circularly polarized microwave radiation induced magnetoresistance oscillations observed at low magnetic fields are similar to the oscillations observed with linearly polarized radiation. For the linearly polarized radiation, the magnetoresistive response is a strong sinusoidal function of the launcher rotation (or linear polarization) angle, θ. For circularly polarized radiation, the oscillatory magnetoresistive response is hardly sensitive to θ.
AI evidence extraction
Structured fields below were generated from the paper’s abstract and metadata to make the evidence easier to inspect. Automated extraction may be incomplete or incorrect; verify important details against the original paper.
Main findings
In a high mobility GaAs/AlGaAs 2D electron system, radiation-induced magnetoresistance oscillations at low magnetic fields under circularly polarized microwave excitation were reported as similar to those under linearly polarized excitation. The magnetoresistive response depended strongly and sinusoidally on launcher rotation angle θ for linearly polarized radiation, while it was reported as hardly sensitive to θ for circularly polarized radiation.
Outcomes measured
- radiation-induced magnetoresistance oscillations
- magnetoresistive response vs polarization angle (θ)
View raw extracted JSON
{
"study_type": "other",
"exposure": {
"band": "microwave",
"source": null,
"frequency_mhz": null,
"sar_wkg": null,
"duration": null
},
"population": null,
"sample_size": null,
"outcomes": [
"radiation-induced magnetoresistance oscillations",
"magnetoresistive response vs polarization angle (θ)"
],
"main_findings": "In a high mobility GaAs/AlGaAs 2D electron system, radiation-induced magnetoresistance oscillations at low magnetic fields under circularly polarized microwave excitation were reported as similar to those under linearly polarized excitation. The magnetoresistive response depended strongly and sinusoidally on launcher rotation angle θ for linearly polarized radiation, while it was reported as hardly sensitive to θ for circularly polarized radiation.",
"effect_direction": "unclear",
"limitations": [],
"evidence_strength": "insufficient",
"confidence": 0.74,
"peer_reviewed_likely": "yes",
"keywords": [
"microwave excitation",
"circular polarization",
"linear polarization",
"magnetoresistance oscillations",
"GaAs/AlGaAs",
"2DES",
"launcher rotation angle"
],
"suggested_hubs": []
}AI-extracted fields are generated from the abstract and metadata and may be incomplete or incorrect. This material is for informational purposes and is not medical advice.
Identifiers and source
DOI: 10.1038/srep14880
PubMed: 26450679
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