Terahertz emission from electric field singularities in biased semiconductors.

Optics letters · 1996 · Benefit · Insufficient evidence

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BenefitInsufficient evidencePaper 4185

Electric field singularities near sharp anode features in biased metal-semiconductor microstructures enhance terahertz emission from semiconductors by as much as an order of magnitude. Scanning THz measurements of several structures are presented and a physic…

Study snapshot

PublicationOptics letters · 1996

Study typeengineering

Reported directionBenefit

Evidence ratingInsufficient

Abstract

We use electric field singularities in biased metal semiconductor microstructures to enhance the generation of terahertz (THz) radiation from semiconductors. We find that, regardless of the mechanism that is responsible for enhanced THz emission near the anode, singular electric fields near sharp anode features will enhance this emission by as much as an order of magnitude. We show scanning THz measurements of several of these structures and discuss the physical mechanism responsible for this enhanced emission. A new family of more efficient terahertz emitters based on these effects can be designed that will improve the dynamic range of THz imaging and spectroscopy systems.

Machine Enhanced Logic

AI evidence extraction

Structured fields below were generated from the paper’s abstract and metadata to make the evidence easier to inspect. Automated extraction may be incomplete or incorrect; verify important details against the original paper.

Study typeengineering

Effect directionbenefit

PopulationNot supplied

Sample sizeNot supplied

ExposureNot supplied

Evidence strengthInsufficientConfidence: 74% · Peer reviewed: yes

Main findings

Outcomes measured

terahertz (THz) radiation/emission generation efficiency from semiconductors
enhancement of THz emission near anode due to electric field singularities
dynamic range improvement potential for THz imaging and spectroscopy systems

Limitations

No quantitative sample size or number of structures is provided in the abstract.
Specific mechanisms responsible for enhanced THz emission are not detailed in the abstract (only noted as discussed).
No exposure metrics (e.g., frequency, power, SAR) are reported in the abstract.

View raw extracted JSON

{
  "study_type": "engineering",
  "exposure": {
    "band": null,
    "source": null,
    "frequency_mhz": null,
    "sar_wkg": null,
    "duration": null
  },
  "population": null,
  "sample_size": null,
  "outcomes": [
    "terahertz (THz) radiation/emission generation efficiency from semiconductors",
    "enhancement of THz emission near anode due to electric field singularities",
    "dynamic range improvement potential for THz imaging and spectroscopy systems"
  ],
  "main_findings": "Electric field singularities near sharp anode features in biased metal-semiconductor microstructures enhance terahertz emission from semiconductors by as much as an order of magnitude. Scanning THz measurements of several structures are presented and a physical mechanism for the enhanced emission is discussed.",
  "effect_direction": "benefit",
  "limitations": [
    "No quantitative sample size or number of structures is provided in the abstract.",
    "Specific mechanisms responsible for enhanced THz emission are not detailed in the abstract (only noted as discussed).",
    "No exposure metrics (e.g., frequency, power, SAR) are reported in the abstract."
  ],
  "evidence_strength": "insufficient",
  "confidence": 0.74,
  "peer_reviewed_likely": "yes",
  "keywords": [
    "terahertz",
    "THz emission",
    "biased semiconductors",
    "metal-semiconductor microstructures",
    "electric field singularities",
    "anode features",
    "THz imaging",
    "spectroscopy"
  ],
  "suggested_hubs": []
}

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AI-extracted fields are generated from the abstract and metadata and may be incomplete or incorrect. This material is for informational purposes and is not medical advice.

Identifiers and source

DOI: 10.1364/ol.21.001924
PubMed: 19881847

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