Effect of sputtering power on structural and optical properties of radio frequency-sputtered In2S3 thin films.
← Research streamIndium sulfide (In2S3) thin films were deposited by RF magnetron sputtering with sputtering power varied from 60 to 120 W. Films were polycrystalline β-In2S3 with preferred orientations (103) and (206); AFM showed nanosized grains increasing from 7 nm (60 W) …
Study snapshot
Abstract
In this study, we investigated the structural and optical properties of indium sulfide (In2S3) thin films as a substitute for the CdS buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells. The In2S3 films were deposited on glass substrates using radio frequency (RF) magnetron sputtering. The sputtering power was changed from 60 to 120 W in 20 W increments. The effects of sputtering power on the crystallinity, surface morphology, and optical properties of the films were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDS), and UV-visible spectrophotometry. The XRD analyses indicated that the films were polycrystalline β-In2S3 structures with two preferred orientations along the (103) and (206) directions. The AFM images revealed that the films had nanosized grains and that the size increased from 7 nm for the samples prepared at 60 W to 13 nm for those prepared at 120 W. The optical band gap of the samples was found to vary between 2.88 and 2.43 eV.
AI evidence extraction
Structured fields below were generated from the paper’s abstract and metadata to make the evidence easier to inspect. Automated extraction may be incomplete or incorrect; verify important details against the original paper.
Main findings
Indium sulfide (In2S3) thin films were deposited by RF magnetron sputtering with sputtering power varied from 60 to 120 W. Films were polycrystalline β-In2S3 with preferred orientations (103) and (206); AFM showed nanosized grains increasing from 7 nm (60 W) to 13 nm (120 W), and the optical band gap varied between 2.88 and 2.43 eV across samples.
Outcomes measured
- Thin film crystallinity/structure (XRD)
- Surface morphology/grain size (AFM)
- Composition (EDS)
- Optical properties/band gap (UV-visible spectrophotometry)
View raw extracted JSON
{
"study_type": "other",
"exposure": {
"band": null,
"source": "radio frequency (RF) magnetron sputtering",
"frequency_mhz": null,
"sar_wkg": null,
"duration": null
},
"population": null,
"sample_size": null,
"outcomes": [
"Thin film crystallinity/structure (XRD)",
"Surface morphology/grain size (AFM)",
"Composition (EDS)",
"Optical properties/band gap (UV-visible spectrophotometry)"
],
"main_findings": "Indium sulfide (In2S3) thin films were deposited by RF magnetron sputtering with sputtering power varied from 60 to 120 W. Films were polycrystalline β-In2S3 with preferred orientations (103) and (206); AFM showed nanosized grains increasing from 7 nm (60 W) to 13 nm (120 W), and the optical band gap varied between 2.88 and 2.43 eV across samples.",
"effect_direction": "unclear",
"limitations": [],
"evidence_strength": "insufficient",
"confidence": 0.74,
"peer_reviewed_likely": "yes",
"keywords": [
"In2S3",
"indium sulfide",
"thin films",
"RF magnetron sputtering",
"sputtering power",
"XRD",
"AFM",
"EDS",
"UV-visible",
"optical band gap",
"CIGS solar cells"
],
"suggested_hubs": []
}AI-extracted fields are generated from the abstract and metadata and may be incomplete or incorrect. This material is for informational purposes and is not medical advice.
Identifiers and source
DOI: 10.1166/jnn.2014.10079
PubMed: 25970994