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Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering.

Materials (Basel, Switzerland) · 2016 · Unclear · Insufficient evidence

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Ga-doped ZnO thin films prepared by radio frequency sputtering showed degraded crystallinity with increasing Ga content. Conductivity increased initially with Ga substitution, then decreased (attributed to separation of neutralized Ga from the lattice), and i…

Study snapshot

PublicationMaterials (Basel, Switzerland) · 2016
Study typeother
Reported directionUnclear
Evidence ratingInsufficient

Abstract

In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film's optoelectronic properties as well as the film's electrical stability were investigated. The results showed that the film's crystallinity degraded with increasing Ga content. The film's conductivity was first enhanced due to the replacement of Zn by Ga before decreasing due to the separation of neutralized gallium atoms from the ZnO lattice. When the Ga content increased to 15.52 at %, the film's conductivity improved again. Furthermore, all films presented an average transmittance exceeding 80% in the visible region. Regarding the film's electrical stability, GZO thermally treated below 200 °C exhibited no significant deterioration in electrical properties, but such treatment over 200 °C greatly reduced the film's conductivity. In normal atmospheric conditions, the conductivity of GZO films remained very stable at ambient temperature for more than 240 days.

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AI evidence extraction

Structured fields below were generated from the paper’s abstract and metadata to make the evidence easier to inspect. Automated extraction may be incomplete or incorrect; verify important details against the original paper.

Study typeother
Effect directionunclear
PopulationNot supplied
Sample sizeNot supplied
ExposureNot supplied
Evidence strengthInsufficientConfidence: 74% · Peer reviewed: yes

Main findings

Ga-doped ZnO thin films prepared by radio frequency sputtering showed degraded crystallinity with increasing Ga content. Conductivity increased initially with Ga substitution, then decreased (attributed to separation of neutralized Ga from the lattice), and improved again at 15.52 at% Ga; films had >80% average visible transmittance. Electrical properties were stable after thermal treatment below 200 C but conductivity was greatly reduced after treatment above 200 C, and conductivity remained stable at ambient temperature in normal atmospheric conditions for more than 240 days.

Outcomes measured

  • optoelectronic properties
  • crystallinity
  • conductivity
  • optical transmittance (visible region)
  • electrical stability under thermal treatment
  • electrical stability over time in atmospheric conditions
View raw extracted JSON
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  "study_type": "other",
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  "outcomes": [
    "optoelectronic properties",
    "crystallinity",
    "conductivity",
    "optical transmittance (visible region)",
    "electrical stability under thermal treatment",
    "electrical stability over time in atmospheric conditions"
  ],
  "main_findings": "Ga-doped ZnO thin films prepared by radio frequency sputtering showed degraded crystallinity with increasing Ga content. Conductivity increased initially with Ga substitution, then decreased (attributed to separation of neutralized Ga from the lattice), and improved again at 15.52 at% Ga; films had >80% average visible transmittance. Electrical properties were stable after thermal treatment below 200 \u0000C but conductivity was greatly reduced after treatment above 200 \u0000C, and conductivity remained stable at ambient temperature in normal atmospheric conditions for more than 240 days.",
  "effect_direction": "unclear",
  "limitations": [],
  "evidence_strength": "insufficient",
  "confidence": 0.74,
  "peer_reviewed_likely": "yes",
  "keywords": [
    "Ga-doped ZnO",
    "GZO",
    "thin films",
    "radio frequency sputtering",
    "conductivity",
    "transmittance",
    "crystallinity",
    "thermal treatment",
    "electrical stability"
  ],
  "suggested_hubs": []
}
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AI-extracted fields are generated from the abstract and metadata and may be incomplete or incorrect. This material is for informational purposes and is not medical advice.

Identifiers and source

DOI: 10.3390/ma9120987
PubMed: 28774108

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