RF Safe

Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K.

Nano letters · 2008 · Unclear · Insufficient evidence

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UnclearInsufficient evidencePaper 2779

An SOI-based RF-SET was demonstrated to operate successfully above 4.2 K, with stable single-dot transport characteristics after five thermal cyclings to 4.2 K. Charge sensitivity was reported as 36 microe(rms) Hz(-1/2) at 4.2 K, and RF-SET operation was demo…

Study snapshot

PublicationNano letters · 2008
Study typeengineering
Reported directionUnclear
Evidence ratingInsufficient

Abstract

A radio frequency single-electron transistor (RF-SET) based on a silicon-on-insulator (SOI) substrate is demonstrated to operate successfully at temperatures above 4.2 K. The SOI SET was fabricated by inducing lateral constrictions in doped SOI nanowires. The device structure was optimized to overcome the inherent drawback of high resistance with the SOI SETs. We performed temperature variation measurements after five thermal cyclings of the same sample to 4.2 K and found that the single-dot device transport characteristics are highly stable. The charge sensitivity was measured to be 36 microe(rms) Hz(-1/2) at 4.2 K, and the RF-SET operation was demonstrated up to 12.5 K for the first time. This work is an important prerequisite to realizing operation of RF-SETs at noncryogenic temperatures.

Machine Enhanced Logic

AI evidence extraction

Structured fields below were generated from the paper’s abstract and metadata to make the evidence easier to inspect. Automated extraction may be incomplete or incorrect; verify important details against the original paper.

Study typeengineering
Effect directionunclear
PopulationNot supplied
Sample sizeNot supplied
ExposureRF
Evidence strengthInsufficientConfidence: 74% · Peer reviewed: yes

Main findings

An SOI-based RF-SET was demonstrated to operate successfully above 4.2 K, with stable single-dot transport characteristics after five thermal cyclings to 4.2 K. Charge sensitivity was reported as 36 microe(rms) Hz(-1/2) at 4.2 K, and RF-SET operation was demonstrated up to 12.5 K.

Outcomes measured

  • RF single-electron transistor (RF-SET) operation at elevated temperatures
  • Device transport characteristic stability after thermal cycling
  • Charge sensitivity (36 microe(rms) Hz(-1/2) at 4.2 K)
  • Maximum demonstrated operating temperature (up to 12.5 K)

Limitations

  • No RF frequency or operating power/SAR information reported in the abstract
  • No quantitative details provided on stability metrics beyond qualitative description
  • Engineering/device study; no biological or health outcomes assessed
View raw extracted JSON
{
  "study_type": "engineering",
  "exposure": {
    "band": "RF",
    "source": null,
    "frequency_mhz": null,
    "sar_wkg": null,
    "duration": null
  },
  "population": null,
  "sample_size": null,
  "outcomes": [
    "RF single-electron transistor (RF-SET) operation at elevated temperatures",
    "Device transport characteristic stability after thermal cycling",
    "Charge sensitivity (36 microe(rms) Hz(-1/2) at 4.2 K)",
    "Maximum demonstrated operating temperature (up to 12.5 K)"
  ],
  "main_findings": "An SOI-based RF-SET was demonstrated to operate successfully above 4.2 K, with stable single-dot transport characteristics after five thermal cyclings to 4.2 K. Charge sensitivity was reported as 36 microe(rms) Hz(-1/2) at 4.2 K, and RF-SET operation was demonstrated up to 12.5 K.",
  "effect_direction": "unclear",
  "limitations": [
    "No RF frequency or operating power/SAR information reported in the abstract",
    "No quantitative details provided on stability metrics beyond qualitative description",
    "Engineering/device study; no biological or health outcomes assessed"
  ],
  "evidence_strength": "insufficient",
  "confidence": 0.74,
  "peer_reviewed_likely": "yes",
  "keywords": [
    "radio frequency",
    "single-electron transistor",
    "RF-SET",
    "silicon-on-insulator",
    "SOI",
    "nanowire",
    "charge sensitivity",
    "thermal cycling",
    "low temperature electronics"
  ],
  "suggested_hubs": []
}
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AI-extracted fields are generated from the abstract and metadata and may be incomplete or incorrect. This material is for informational purposes and is not medical advice.

Identifiers and source

DOI: 10.1021/nl801992j
PubMed: 19367857

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