Nanocrystalline graphite films nucleation by the radio frequency bias pretreatment.

Journal of nanoscience and nanotechnology · 2011 · Unclear · Insufficient evidence

← Research stream

UnclearInsufficient evidencePaper 3216

Study snapshot

PublicationJournal of nanoscience and nanotechnology · 2011

Study typeengineering

Reported directionUnclear

Evidence ratingInsufficient

Abstract

New method for nucleation of different nanocrystalline carbon films upon monocrystalline Si substrate was proposed. The process is based on a combination of microwave and radio frequency plasma assisted chemical vapor deposition methods. Potential of the method for nucleation was demonstrated by deposition of nanocrystalline diamond film in pure microwave plasma in one process, immediately after "seeding" procedure. The method was also used for growth of nanocrystalline graphite (NCG) films, which are currently under intensive investigation due to their exceptional electronic properties, particularly fine electron emission characteristics. Deposited NCG films have demonstrated remarkable electron field emission properties having current density of up to 10 A/cm2. The films have also possessed good adhesion to silicon substrate. Carbon films and nucleation layer were characterized by scanning electron microscopy, transmission electron microscopy and Raman spectroscopy.

Machine Enhanced Logic

AI evidence extraction

Structured fields below were generated from the paper’s abstract and metadata to make the evidence easier to inspect. Automated extraction may be incomplete or incorrect; verify important details against the original paper.

Study typeengineering

Effect directionunclear

PopulationNot supplied

Sample sizeNot supplied

ExposureRF

Evidence strengthInsufficientConfidence: 74% · Peer reviewed: yes

Main findings

A method combining microwave and radio frequency plasma assisted chemical vapor deposition was proposed for nucleation of nanocrystalline carbon films on monocrystalline Si. The approach was demonstrated by depositing nanocrystalline diamond after an RF "seeding" procedure and was also used to grow nanocrystalline graphite films with reported electron field emission current density up to 10 A/cm2 and good adhesion to silicon.

Outcomes measured

Nucleation of nanocrystalline carbon films on monocrystalline Si substrate
Growth/deposition of nanocrystalline diamond film
Growth/deposition of nanocrystalline graphite (NCG) films
Electron field emission properties (current density up to 10 A/cm2)
Adhesion of films to silicon substrate
Material characterization by SEM, TEM, Raman spectroscopy

Limitations

No frequencies, power levels, or exposure parameters for the microwave/RF plasma are provided in the abstract.
No quantitative comparison group or baseline is described in the abstract.
No sample size or replication details are reported in the abstract.

View raw extracted JSON

{
  "study_type": "engineering",
  "exposure": {
    "band": "RF",
    "source": "plasma assisted chemical vapor deposition",
    "frequency_mhz": null,
    "sar_wkg": null,
    "duration": null
  },
  "population": null,
  "sample_size": null,
  "outcomes": [
    "Nucleation of nanocrystalline carbon films on monocrystalline Si substrate",
    "Growth/deposition of nanocrystalline diamond film",
    "Growth/deposition of nanocrystalline graphite (NCG) films",
    "Electron field emission properties (current density up to 10 A/cm2)",
    "Adhesion of films to silicon substrate",
    "Material characterization by SEM, TEM, Raman spectroscopy"
  ],
  "main_findings": "A method combining microwave and radio frequency plasma assisted chemical vapor deposition was proposed for nucleation of nanocrystalline carbon films on monocrystalline Si. The approach was demonstrated by depositing nanocrystalline diamond after an RF \"seeding\" procedure and was also used to grow nanocrystalline graphite films with reported electron field emission current density up to 10 A/cm2 and good adhesion to silicon.",
  "effect_direction": "unclear",
  "limitations": [
    "No frequencies, power levels, or exposure parameters for the microwave/RF plasma are provided in the abstract.",
    "No quantitative comparison group or baseline is described in the abstract.",
    "No sample size or replication details are reported in the abstract."
  ],
  "evidence_strength": "insufficient",
  "confidence": 0.74,
  "peer_reviewed_likely": "yes",
  "keywords": [
    "radio frequency bias",
    "microwave plasma",
    "plasma assisted chemical vapor deposition",
    "nanocrystalline graphite",
    "nanocrystalline diamond",
    "nucleation",
    "silicon substrate",
    "field emission",
    "Raman spectroscopy",
    "SEM",
    "TEM"
  ],
  "suggested_hubs": []
}

AI can be wrong. Always verify against the paper.

AI-extracted fields are generated from the abstract and metadata and may be incomplete or incorrect. This material is for informational purposes and is not medical advice.

Identifiers and source

DOI: 10.1166/jnn.2011.3462
PubMed: 22400280

Read the original paper →

← Back to the Research Library